Vertical light-emitting diodes have many advantages such as uniform current injection, excellent scalability of the chip size, and simple packaging process. Hitherto, however, technologically important semiconductor aluminum gallium nitride deep ultraviolet LEDs are mainly through lateral injection. Herein, we demonstrate a new and practical path for vertical AlGaN deep UV LEDs, which exploits a thin AlN buffer layer formed on a nanowire-based template on silicon . Such a buffer layer enables in situ formation of vertical AlGaN deep UV LEDs on Si. Near Lambertian emission pattern is measured from the top surface.
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An alternative path for vertical AlGaN deep UV LEDs is to use nanowire structures38,39. However, the fabrication of AlGaN nanowire deep UV LEDs is one remaining issue. This is mainly due to the presence of gaps amongst nanowires.
There are also LEDs that include a small, current limiting resistor. If you look closely at the image below, there is a small, black square IC on the post to limit the current on these types of LEDs. There are different chipsets used to control an individual LED that is chained together. The bigger square IC on the right controls the colors individually.
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When a forward bias is applied, electrons in the n-type region are pushed toward the p-type region and, likewise, holes in the p-type material are pushed in the opposite direction toward the n-type material. At the junction between the p-type and n-type materials, the electrons and holes will recombine and each recombination event will produce a quantum of energy that is an intrinsic property of the semiconductor where the recombination occurs. A common question companies ask when exploring UVC LEDs for disinfection applications relates to how UVC LEDs actually work.
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